, one. 20 stern ave. springfield, new jersey 07081 u.s.a. bc177,8,9 bc257,8,9 .bc307,8,9 BC320,1,2 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 the above types are pnp silicon planar epitaxial transistors for use in af small signal amplifier stages and direct coupled circuits, bc177, 8, 9 are complementary to bc107, 8, 9. bc257, 8, 9 are complementary to bc167, 8, 9. bc307, 8, 9 are complementary to bc237, 8, 9. BC320, 1, 2 are complementary to bc317, 8, 9. to-18 to-92b to-92f to-92a case cbs bc177,8,9 ecb bc257,8,9 ceb bc307,8,9 ssc BC320fl,2 absolute maximum ratings type bc177 bc178 bc179 bc257 bc258 bc259 3c307 bcj08 3c309 BC320 bc321 bc322 -vcbo (v) 50 30 25 50 30 25 50 30 25 50 45 30 -vces (v) 50 30 25 50 30 25 50 30 25 -vceo (v) 45 25 20 45 25 20 45 25 20 45 30 20 -vebo (v) 5 5 5 5 5 5 5 5 6 5 5 -ic(dc) (ma) 100 100 100 100 100 100 100 100 100 150 150 150 ptot * (mw) 300 300 300 300 300 300 300 300 300 310 310 310 tjt t8tg -55 to 175c -55 to 150c -55 to 150c -55 to 150c * tstal power dissipation ? 2c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. informat.on hirnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
3ijp6trical characteristics (ta=25c unless otherwise noted) parameter collector-base breakdown voltage collector-emitter breakdown voltage smitter-base breakdown voltage collector cutoff current bc177, 178, 179 "\, 258, 259 | only bc307, 308, 309 j collector cutoff current BC320, 321, 322 only collector-emitter saturation voltage types collector-emitter knee voltage bc177, 178, 1791 onl ^ bc307, 308, 309 \r saturation voltage all types base-emitter voltage all types BC320, 321, 322 only current gain-bandwidth product collector-base capacitance bc177. 178, 179 bc257, 258, 259 3c307, 308, 309 BC320, 321, 322 noise figure bc177, 178 bc257, 258 bc307, 308 BC320, 321 symbol -bvcbo -lvceo * -bvebo -ices -icbo -vce(sat)* -vcek -vbe(sat)* -vbb * -vbe * ft cob nf min typ max note 1 1 15 4 30 15 0.1 0.3 0.25 0.3 0.6 0.72 0.92 0.6 0.65 0.75' 0.7 0.77 180 3.6 7 j.2 6 3-2 6 3-2 4 2 10 2 10 2 10 2 6 unit v v v na ua na ua v v v v v v v mhz pf pf pf pf pp db db db db db test conditions -ic=10ua le-0 -ic=2ma ib-o -le-ljia ic-0 vcs=vces vbe-o vce-vces vbe-o ta=125c -vcb-20v le-0 -vcb=20v ie=0 ta=iooqc -ic=10ma -!b=0.5ma -ic=100ma -lb=5ma -i(3=10ma,lb*value at which -lc=llma -vce=lv -ic-10ma -lb=0-5ma -1c -100ma -lb-5ma -ic=2ma -vce-5v -ic-loma -vcb=5v -ic=10ma -vce=5v -vcb=iov ie-o f-lmhz -ic-0.2ma -vce=5v rg-2ka f-lkhz af.200hz * &ilse test t pulse width=0.3ms, duty cycle=l/0 1 : equal_to_the value of absolute maximum ratings
parameter no/5e figure bc179 "i bc259 > only bcj09 bc322 1 symbol nf mih typ max 1.2 4 1.2 4 unit db db test conditions -1c =0. 2ma -7ce-57 rg=2k& f-lkhz af-200hz -ic=0.2ma -703=5^ rg=2ka f=30hz-15khz d.c. current gain (hfe) @ -v8""57 ta=25c at-ic (pulsed) 0.01ma 2ma 100ma hfe g-roup vi kin typ max 70 70 110 140 60 hfe group a min typ max 110 110 170 220 80 hfe group b min typ max ' 200 200 300 450 140 hfe group c min typ max 330 420 520 800 240 h - parameters ? -ic=2ma -vce=57 f-lkhz ta=25c ^ h - parameter injwt impedance voltage feedback ratio small signal current gain output admittance symbol hie nre hfe hoe hfe group 71 min typ max 1.4 2.5 75 ho 150 20 hfe group a min typ max 2.7 3 125 190 260 25 hfe group b min typ max 4-5 ? 3.5 240 330 500 35 hfe group c min typ max 8.7 4 450 580 900 60 unit kfl xlo-4 rv 200 0.01 typical characteristics at ta=25c (pulse test) d.c. current gain vs collector current 100 vbe and vce(sat) vs collector current
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